Semiconductor laser processing with mirror mask
US4661679A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 1985 |
| Grant date | Apr 28, 1987 |
| Priority date | — |
| Expiry date | Jun 28, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor processing technique is provided for reacting with the surface (2) of a semiconductor wafer substrate (4) only along a predetermined pattern without a pass-through mask. Excimer pulsed ultraviolet laser radiation (32) is reflected by a mirror (10) having a selective pattern (12) thereon to direct laser radiation only along a predetermined pattern onto the substrate surface (2) as determined by the selective mirror pattern (12), to selectively activate designated areas of the substrate (4). There is further provided a method for forming a predetermined pattern on a cylindrical target (76) by directing excimer pulsed ultraviolet laser radiation (74) along the conical axis of a conical mirror (72) having a selective pattern thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.