High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4661838A · kind A · utility
13Cited by
3References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1985 |
| Grant date | Apr 28, 1987 |
| Priority date | — |
| Expiry date | Oct 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
High voltage semiconductor devices include a drift layer region underlying a field gate electrode, the drift layer region having a selected charge density of lesser magnitude than the charge density of the remainder of the drift layer. This tailoring of the charge density of the drift layer region lowers the pinch-off voltage of a MOSFET inherent in the drift layer region. This lower pinch-off voltage decreases the potential of a device buried-layer when the device is in a reverse blocking mode of operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.