Refractory metal silicide sputtering target
US4663120A · kind A · utility
27Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1985 |
| Grant date | May 5, 1987 |
| Priority date | — |
| Expiry date | Apr 15, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A refractory metal silicide sputtering target is made by reacting refractory metal and silicon to about 70 to 90% completion of the reaction, comminuting the material, and then vacuum hot pressing the comminuted material to a high density compact having a theoretical density greater than about 95 percent and forming the metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.