Composite circuit for power semiconductor switching
US4663547A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1981 |
| Grant date | May 5, 1987 |
| Priority date | — |
| Expiry date | Apr 24, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/567
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A solid state composite control circuit includes a normally-off gating device connected in series with a normally-on high voltage semiconductor device so that the combination operates as a normally-off high power semiconductor device. The control device is a low voltage semiconductor device, which can switch rapidly with very low gate turn-off current during turn-off of the composite circuit. In a particular example, a low voltage, normally-off, MOSFET is connected in series with the cathode of a high voltage, normally-on FCT. In another example, a low voltage, normally-off, MOSFET is connected in series with the source of a high voltage, normally-on JFET. The composite circuit has a very high turn-off gain as well as high dv/dt and di/dt capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.