Solid state image pickup device in which the transfer gate areas are supplied with negative voltage during the vertical transfer period and light receiving period but not when the positive readout pulse period is applied
US4663771A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1986 |
| Grant date | May 5, 1987 |
| Priority date | — |
| Expiry date | Jan 13, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
In an image pickup device comprising photodetectors (1), vertical transfer portions (2), transfer gate areas (3) each provided between one of the photodetectors (1) and the corresponding one of the vertical transfer portions (2), a storage portion (7), a horizontal transfer portion (5) and an output portion (6), the whole of which are formed on a semiconductor substrate, wherein signal charges obtained in the photodetectors (1) during a light receiving period are read out through the transfer gate areas (3) to the vertical transfer portions (2) during a reading out period, then transferred from the vertical transfer portions (2) to the storage portion (7) at high speed and further transferred through the horizontal transfer portion (5) to the output portion (6); the transfer gate areas (3) are of high impurity density, and each of the vertical transfer portions (2) is surrounded by a region (13) of high impurity density including the transfer gate areas. The transfer gate portions (3) and other portions in the region (13) of high impurity density positioned around each of the vertical transfer portions (2) are kept in an accumulation state during the operating period except for dur…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.