Method of manufacturing semiconductor device
US4663825A · kind A · utility
17Cited by
5References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 25, 1985 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Sep 25, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprises the steps of forming a gate electrode on a silicon substrate of a p-conductivity type and source and in the drain regions of an n-conductivity type substrate so as to interpose the gate electrode therebetween; depositing silicon on the source and drain regions to form a polysilicon wiring layer; and ion-implanting an impurity to an interface between the source and drain regions and the polysilicon wiring layer at acceleration voltage of 40 keV and a dose of 5.times.10.sup.15 cm.sup.-2 to mechanically break down an oxide film formed at said interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.