Creating or removing a conductive layer on an insulator over a semiconductor
US4664746A · kind A · utility
1Cited by
1References
2Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 29, 1986 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Apr 29, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new phenomenon in integrated circuit etch processing is presented, explained and utilized to permit better removal of layers overlying integrated circuit structures, and if desired, the formation of conductive layers on such structures by a less complicated and lower temperature process than has been possible by conventional techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.