Deposition method for producing silicon carbide high-temperature semiconductors
US4664944A · kind A · utility
10Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1986 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Jan 31, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/148
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.