Semiconductor device
US4665428A · kind A · utility
40Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1986 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Aug 12, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure suitable for making a non-volatile memory comprises an electrically conducting substrate, at least two layers of different conductivity type selected from i, p and n-type amorphous or microcrystalline semiconducting material and an additional defect layer of amorphous or microcrystalline semiconductor material located between two of the said different layers. The defect layer reduces the voltage required to transform the structure to a memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.