Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material
US4665504A · kind A · utility
3Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1983 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Nov 16, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device comprises an electrically conducting substrate having deposited thereon a layer of an amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material to form a junction. Preferably the silicon-containing material is silicon and the junction is a heterojunction. The device has fast switching characteristics and good stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.