Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
US4666803A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 22, 1985 |
| Grant date | May 19, 1987 |
| Priority date | — |
| Expiry date | Nov 22, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 45 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.