Method of manufacturing an amorphous Si electrophotographic photoreceptor
US4666816A · kind A · utility
2Cited by
2References
6Claims
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Assignee
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Key dates
| Filing date | Aug 26, 1986 |
| Grant date | May 19, 1987 |
| Priority date | — |
| Expiry date | Aug 26, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08278
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing an electrophotographic photoreceptor having an amorphous silicon layer formed as a photoconductive layer, on an electrically conductive support member. The manufacturing method includes the steps of preparing the amorphous silicon layer as the photoconductive layer by employing Si.sub.2 H.sub.6 (disilane) as a main raw material gas through a glow discharge process, and simultaneously, adding nitrogen and boron to the main raw material gas, with the unsaturated bond being stabilized by hydrogen or hydrogen and fluorine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.