Back junction photovoltaic solar cell
US4667060A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 1985 |
| Grant date | May 19, 1987 |
| Priority date | — |
| Expiry date | May 28, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the interface between the front contact and the front surface of the cell. The solar cell preferably is formed of either n-type or p-type silicon, with the p-n junction preferably formed therein by ion implantation. Preferably, the solar cell is about 50 micrometers thick and, possesses a conversion efficiency of at least 15% over an input intensity range of from about one to about 1,000 suns. The solar cell is particularly useful for concentrator solar cells intended for operation at high intensity (in excess of 500 suns).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.