Patent · US Expired

High frequency, high voltage MOSFET isolation amplifier

US4667144A · kind A · utility

17Cited by
8References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 3, 1986
Grant dateMay 19, 1987
Priority date
Expiry dateJun 3, 2006

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03F3/3001
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A MOSFET isolation amplifier apparatus to allow stable high frequency linear operation of MOSFET power stages and to provide precise regulation of a load current through a magnetic yoke load. Variations of transfer characteristics and input parameters in the MOSFET power stages are corrected by use of a feedback signal which is generated in a current sense resistor by the load current. Such a power stage allows the implementation of isolation amplifiers which can provide high power high frequency linear regulation at elevated voltages and currents.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.