Electric resistor consisting of at least two monolithically combined mis-field effect transistors for integrated semiconductor circuits
US4667216A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1986 |
| Grant date | May 19, 1987 |
| Priority date | — |
| Expiry date | Feb 27, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
Electric resistor, including at least two simultaneously produced monolithically combined MIS field-effect transistors for integrated circuits, each of the transistors having a source electrode and a drain electrode defining a source-drain path, a gate terminal and a channel width to channel length ratio, the transistors being connected in series with each other through the source-drain paths, each respective transistor having the gate terminal thereof connected to one of the source and drain electrodes thereof, and the transistors differ with respect to the channel width to channel length ratios thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.