Patent · US Expired

Electric resistor consisting of at least two monolithically combined mis-field effect transistors for integrated semiconductor circuits

US4667216A · kind A · utility

2Cited by
2References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 1986
Grant dateMay 19, 1987
Priority date
Expiry dateFeb 27, 2006

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60

Abstract

Electric resistor, including at least two simultaneously produced monolithically combined MIS field-effect transistors for integrated circuits, each of the transistors having a source electrode and a drain electrode defining a source-drain path, a gate terminal and a channel width to channel length ratio, the transistors being connected in series with each other through the source-drain paths, each respective transistor having the gate terminal thereof connected to one of the source and drain electrodes thereof, and the transistors differ with respect to the channel width to channel length ratios thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.