Patent · US Expired

Evaporated thick metal and airbridge interconnects and method of manufacture

US4670297A · kind A · utility

34Cited by
9References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 21, 1985
Grant dateJun 2, 1987
Priority date
Expiry dateJun 21, 2005

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A first masking layer of a first resist is provided over a semiconductor substrate and is patterned in a selected region to provide a masked region over which an airbridge interconnect will be provided. A second relatively thick layer of a second, different type of resist and a third relatively thin layer of resist are provided, respectively, over the substrate. The second and third layers of resist are patterned to provide an aperture having overhanging portions exposing the previously applied patterned regions of the first layer, and selected adjacent portions of the substrate. The second and third layers may also be patterned to provide a region for a patterned strip conductor. A stream of evaporated metal is directed towards the substrate and deposited within the apertures to provide an airbridge interconnect conductor and patterned strip conductor. The overhanging portions of the apertures provide separation between the metal layer deposited within the aperture and the metal layer deposited over the third masking layer, allowing the second and third masking layers to be lifted-off without disturbing the conductors. The masked regions underlying the bridges are also removed lea…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.