Method of making silicon diaphragm pressure sensor
US4670969A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1985 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | Jan 25, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.