Method of forming suspended gate, chemically sensitive field-effect transistor
US4671852A · kind A · utility
55Cited by
4References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 7, 1986 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | May 7, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4143
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is disclosed for forming a chemically sensitive field-effect transistor having a suspended gate which enables the uniform and reproducible manufacture of such devices. Controlled uniformity and device response is provided by this method which makes the field-effect transistors suitable for use as sensors, alarms and analyzers for gases. A method of regenerating a chemically sensitive field-effect transistor having a suspended gate is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.