Electrophotographic member having multilayered amorphous silicon photosensitive member
US4672015A · kind A · utility
10Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1985 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | Dec 16, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to an electrophotographic member which is highly sensitive to the light of long wavelengths. Amorphous silicon is used as a photosensitive base member. A long wavelength sensitizing region has a narrower forbidden band gap width than that of the base member, and consists of at least two semiconductor films that are laminated and that have at least different forbidden band gap widths or different conductivities. An increased number of semiconductor films may, of course, be laminated to constitute the sensitizing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.