Waveguide-mounted amplifier
US4672328A · kind A · utility
6Cited by
1References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 10, 1985 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | Dec 10, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/601
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A metal partition wall is placed inside a waveguide without ridge or the like and has an aperture in which a GaAs-FET is located, so that the input and output are coupled only through this GaAs-FET. The input and output terminals of the GaAs-FET are coupled through L-shaped coupling to the waveguide. An amplifier thus constructed has a high gain and is best adapted for power, while because the metal partition wall also serves as a heat sink.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.