Ballistic heterojunction bipolar transistor

US4672404A · kind A · utility

Assignee

• Cornell Research Foundation, Inc. · US

Inventors

• David Ankri · Jouy-le-Moutier, FR
• Lester F. Eastman · Ithaca, US
• Walter H. Ku · Ithaca, US

Key dates

• Filing date: Sep 3, 1985
• Grant date: Jun 9, 1987
• Expiry date: Sep 3, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D48/362

Abstract

A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scattering electrons to the upper valleys. In this manner the electrons bay be transported across the base region virtually without collisions and at a velocity approximately 10 times that of normal electron diffusion across the base region, thus increasing the frequence response of the transistor.