Pressure sensor
US4672411A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1984 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | Dec 13, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a pressure sensor having a diaphragm formed in a semiconductor body, the diaphragm having at least one pair of pressure sensing semiconductor strips in a major surface thereof. One end of each of the strips is connected to each other by a semiconductor region. The semiconductor region is formed in a direction of small piezoresistive coefficients, and the strips are formed in a direction of great piezoresistive coefficients. Also, the region has a smaller resistance than the resistance of the strips. Also, electrode lead-out regions are provided at the other ends of the strips, which regions have low resistance, extend in a direction of small piezoresistive coefficients, and extend beyond the edge of the diaphram so the electrodes contact the semiconductor body outside the diaphragm. According to the present invention, a pressure sensor of high sensitivity and high precision can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.