Method of manufacturing semiconductor device
US4675074A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1985 |
| Grant date | Jun 23, 1987 |
| Priority date | — |
| Expiry date | Jul 31, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32316
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x<1) having a surface (100), a step of forming on the first layer a second layer of Ga.sub.1-y Al.sub.y As (0.ltoreq.y<1) having a surface (100), and a step of chemically etching the layers from a level above the second layer and along the direction of <011>. The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.