Directed energy conversion of semiconductor materials
US4675467A · kind A · utility
9Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1986 |
| Grant date | Jun 23, 1987 |
| Priority date | — |
| Expiry date | Apr 5, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Directed energy conversion of semiconductors by the directed energy fusion of a selective region of a semiconductor layer to provide a conductive path through the layer. A conductive path is formed through a semiconductive layer through opposed electrodes by conversion of the semiconductive region, for example, by laser energy applied to change the structure in the region extending between the electrodes. The change in conductivity of the path is monitored and used to control the formation of the conductive path by controlling the directed energy source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.