Light emitting semiconductor device
US4675710A · kind A · utility
10Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1982 |
| Grant date | Jun 23, 1987 |
| Priority date | — |
| Expiry date | Mar 24, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An InGaAsP/InP light emitting semiconductor device which includes an active layer buried in a groove. A (111) B facet of the InP crystal, which is an inclined side plane of the groove, is exposed. The side edges of the InGaAsP active layer reach to the (111) B facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.