MOS transistor
US4675713A · kind A · utility
8Cited by
12References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1985 |
| Grant date | Jun 23, 1987 |
| Priority date | — |
| Expiry date | Aug 12, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/902
Abstract
An improved MOS transistor and method for making that transistor are provided. The improved transistor is characterized by decreased size, improved switching speed, and improved reliability in inductive load use. The improved structure is achieved through the use of a low minority carrier injecting source region formed, for example, by providing a low barrier height metal silicide. The metal silicide source provides a source of majority carriers but little minority carrier injection and hence little parasitic bipolar transistor action.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.