Apparatus for thin film formation
US4676194A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1986 |
| Grant date | Jun 30, 1987 |
| Priority date | — |
| Expiry date | Jan 27, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/221
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a thin film on a substrate, which comprises aligning an evaporation means for an evaporating material to be deposited on the substrate, a plasma generating zone for dissociating an ion-forming gas into ions and electrons, an ion beam accelerating zone for accelerating the resulting ions and irradiating them onto the substrate, and said substrate on a substantially straight line in the order stated, and depositing a vapor of the evaporating material on the substrate through the plasma generating zone and the ion beam accelerating zone. According to this method, surface irradiation can be carried out uniformly because the ion species and the vapor atoms are irradiated in quite the same direction. Furthermore, the vapor atoms can be activated to a high degree, and the by-product electrons can be effectively utilized for the evaporation of the evaporant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.