High voltage MOSFET switch

US4677325A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Josef Einzinger · Spalt, DE
• Christine Fellinger · Unterhaching, DE
• Ludwig Leipold · Munich, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE
• Roland Weber · Munich, DE

Key dates

• Filing date: Jun 9, 1986
• Grant date: Jun 30, 1987
• Expiry date: Jun 9, 2006

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K19/0948
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A switching circuit includes two series-connected MOSFET (1, 6) complementing one another, which are interconnected at the drain terminal of each device. The gate terminal of the MOSFET that is grounded is connected to a control input terminal (E). This gate terminal is also connected to the source terminal of a depletion FET (7). The drain terminal of the depletion FET (7) is connected to the gate terminal of the second MOSFET (6) and, in turn, is connected via a resistor (8) to a voltage source (+U). The gate terminal of the depletion FET (7) is grounded. The load (5) is then connected to the drain side of the complementary MOSFET. When the switch is in a blocking condition, the cross current is thus prevented from flowing; and the FET connected to voltage can be completely activated.