CMOS temperature insensitive voltage reference
US4677369A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 1985 |
| Grant date | Jun 30, 1987 |
| Priority date | — |
| Expiry date | Sep 19, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S323/907
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A temperature insensitive voltage reference is described which can advantageously be implemented using standard CMOS processing techniques. A pair of parasitic bipolar transistors are coupled with appropriate resistors to produce a voltage with a temperature coefficient that is equal in value but of opposite polarity to a zener diode voltage-temperature coefficient. This voltage is then combined with a zener diode voltage to yield the desired output reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.