Double heterojunction semiconductor laser having improved high-frequency characteristics
US4677634A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1985 |
| Grant date | Jun 30, 1987 |
| Priority date | — |
| Expiry date | Mar 21, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser of the double heterojunction (DH) type having a current-confining buried blocking layer. According to the invention, a high-resistance region having a disturbed crystal structure is present outside and on either side of the strip-shaped active region and extends at least throughout the thickness of the blocking layer. As a result, the lateral leakage currents and the parasitic capacitances are reduced so that the laser can be used at frequencies considerably higher than 1 GHz. The high-resistance region is preferably obtained by protron bombardment. The invention is particularly advantageous in DCPBH lasers for optical communication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.