Process for producing crystals
US4678535A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1985 |
| Grant date | Jul 7, 1987 |
| Priority date | — |
| Expiry date | Jun 13, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a process for producing crystals in crystallographic point group 32 and corresponding to the comprehensive chemical formula APO.sub.4, wherein symbol A is a chemical element taken from the group Al and Ga, P is phosphorus and O is oxygen, from heated solutions of salts of group A in phosphorus acid, the application of acid concentrations within the range of 12.5 to 20 mol/l, solution temperatures within the range of 110.degree. to 190.degree. C. and total pressures within the range of prevailing static vapour pressure to 2.5 bar provides a simple, safe and cost-effective method of producing perfect, flawless crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.