Patent · US Expired

Process for producing crystals

US4678535A · kind A · utility

3Cited by
3References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 13, 1985
Grant dateJul 7, 1987
Priority date
Expiry dateJun 13, 2005

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B29/14
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

In a process for producing crystals in crystallographic point group 32 and corresponding to the comprehensive chemical formula APO.sub.4, wherein symbol A is a chemical element taken from the group Al and Ga, P is phosphorus and O is oxygen, from heated solutions of salts of group A in phosphorus acid, the application of acid concentrations within the range of 12.5 to 20 mol/l, solution temperatures within the range of 110.degree. to 190.degree. C. and total pressures within the range of prevailing static vapour pressure to 2.5 bar provides a simple, safe and cost-effective method of producing perfect, flawless crystals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.