Process for producing zones for the electrical isolation of the components of an integrated circuit
US4679304A · kind A · utility
18Cited by
6References
7Claims
0Family size
Inventor
Key dates
| Filing date | Nov 15, 1985 |
| Grant date | Jul 14, 1987 |
| Priority date | — |
| Expiry date | Nov 15, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This process consists of producing a mask on a silicon substrate for defining the locations of the isolation zones to be formed, doping the unmasked substrate regions, thermally oxidizing said substrate regions, forming a trench in each oxidized region of the substrate and in the regions of substrate located beneath said oxidized regions thermally oxidizing the edges of the trenches, filling the trenches with an isolating dielectric and eliminating the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.