Removal of defects from semiconductors
US4680616A · kind A · utility
11Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1986 |
| Grant date | Jul 14, 1987 |
| Priority date | — |
| Expiry date | May 9, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
Abstract
Removal of defects from semiconductors by applying a reverse bias potential to the semiconductors and irradiating the semiconductors with photon energy greater than their bangap energies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.