Method for forming a deposited film
US4683144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Apr 11, 2005 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate. A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.