Method for forming deposited film
US4683145A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Apr 11, 2005 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11; EQU R.sup.1 --(Si.multidot.R.sup.2 R.sup.3).sub.p --R.sup.4 (c) wherein R.sup.1 and R.sup.4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R.sup.2 and R.sup.3 independently represent H or CH.sub.3 ; and p represents an integer of 3 to 7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.