Process for producing deposition films
US4683146A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Apr 12, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of; PA1 (A) straight chain silicon hydrides represented by the general formula EQU Si.sub.n H.sub.2n+2 PA1 wherein n is an integer 4 or more; PA1 (B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formula EQU Si.sub.m H.sub.2m PA1 wherein m is 3, 4, 5, or 6; and PA1 (C) branched chain silicon hydrides represented by the general formula EQU Si.sub.p H.sub.q PA1 wherein p is an integer of 4 or more and q is an interger of 10 or more; in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.