Method of forming deposition film
US4683147A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Apr 12, 2005 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si.sub. c X.sub.d Y.sub.e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) represe…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.