Vitreous semiconductor supporting structure and device realized with such a structure
US4683163A · kind A · utility
4Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1984 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Oct 16, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vitreous semiconductor supporting structure obtained by connecting semiconductor layers to a vitreous support constituted by at least two glasses. The semiconductor layers are constituted by an electrically and optically active n-ary III-V compound layer (3) and optional complementary layers for passivation (4), index adaptation (6), and protection (7). To keep the active layer in a compression state and optimize its electrical properties, the structure includes at least two glasses, an intermediate glass (15) providing thermoelastic properties and a supporting glass (16) providing a high softening temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.