Semiconductor laser diode with buried hetero-structure
US4683574A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Sep 12, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode and a method of making the same, the diode having a semiconductor substrate, and a plurality of strip shaped heterogenous layers sequentially arranged vertically on the substrate, the heterogenous layers between them providing a strip shaped laser active zone. Additional doped semiconductor structures having a lower refractive index than the heterogenous layers are disposed laterally adjacent to the strip shaped heterogenous layers. A zone adjacent to the additional structure exists laterally of the heterogenous layers, this zone having a conductivity type different from that of the additional structures, and having a conductivity of the lowermost of the heterogenous layers, thereby providing a blocking pn junction at the sides of the heterogenous layers at the boundary between the lowermost layer and the additional structures. The zone has its dopant confined to the direction of the boundary surface between the adjacent zone and the adjoining additional structures, the dopant being diffused only from the boundary surface between the adjacent zone and the additional structures, and not being diffused from the additional structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.