Method for the preparation of thin large-area single crystals of diacetylenes and polydiacetylenes
US4684434A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1985 |
| Grant date | Aug 4, 1987 |
| Priority date | — |
| Expiry date | Feb 26, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/919
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing thin large-area single crystals of diacetylene monomer represented by the formula: EQU R--CX.tbd.C--C.tbd.C--R' wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation, is provided. The method involves forming a liquid layer containing pure diacetylene monomer between two opposed surfaces; applying pressure to the liquid layer disposed between the two opposed surfaces; and crystallizing the liquid layer disposed between the two opposed surfaces while the liquid layer is kept under constant pressure to form thin large-area single crystals of pure diacetylene monomer. A method for preparing thin large-area single crystals of polydiacetylene is also provided. The method involves forming a liquid layer containing diacetylene monomer represented by the formula: EQU R--C.tbd.C--C.tbd.C--R' wherein R and R' are side groups selected such that the diacetylene monomer is polymerizable by a 1,4-addition solid state reaction upon exposure to actinic radiation in pure form between two opposed surfaces; applying pressure to the liquid layer disposed between the tw…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.