Secondary metallization by glass displacement in ceramic substrate
US4684446A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1985 |
| Grant date | Aug 4, 1987 |
| Priority date | — |
| Expiry date | Sep 26, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/128
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for increasing electrical conductance of a metallization on a ceramic substrate wherein the metallization is an intermixture of continuous phases of refractory metal and glass which comprises contacting the refractory metal with an electrically conductive intrusion metal and heating the resulting structure to a temperature at which the glassy phase is fluid, the refractory metal is solid, and the intrusion metal is liquid whereby the liquid metal preferentially wets the refractory metal, migrates into the metallization displacing glass and, upon subsequent solidification, partially or wholly occupies the volume space originally containing the continuous glass phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.