Low pressure chemical vapor deposition of tungsten silicide
US4684542A · kind A · utility
104Cited by
7References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 11, 1986 |
| Grant date | Aug 4, 1987 |
| Priority date | — |
| Expiry date | Aug 11, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF.sub.6. The substrate temperature range is less than about 370.degree. C., while the total pressure range is in the range 0.05-1 Torr. WF.sub.6 flow rates are generally less than 25 sccm, while the higher order silane flow rates are generally less than about 400 sccm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.