Method of manufacturing high-quality semiconductor light-emitting devices
US4684883A · kind A · utility
98Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1985 |
| Grant date | Aug 4, 1987 |
| Priority date | — |
| Expiry date | May 13, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A nondestructive method is proposed for measuring stripe dimensions in order to grade light-emitting structures such as lasers. The width of the near-field emission parallel to the stripe is measured while the laser is operating below threshold. This measurement is correlated with the actual stripe width and with the possibility of kinks developing in the light output. The width of the far-field emission perpendicular to the junction plane can also be measured, and the product of the two widths can be correlated with the stripe area and the possibility of kinks in the laser output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.