Monolithic programmable attenuator
US4684965A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1985 |
| Grant date | Aug 4, 1987 |
| Priority date | — |
| Expiry date | Dec 20, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H11/245
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A programmable attenuator includes a plurality of field effect transistors (FETS) arranged together to provide an attenuation network. Each one of the FETS has a plurality of cell portions, each cell portion having drain, gate and source regions, the source and drain regions of the cell portions being connected in parallel. A first selected portion of the gate regions of each one of said FETS is connected to a gate electrode. A second selected remaining portion of the gate regions of each one of the FETS has the gate regions thereof isolated from the gate electrode. A signal fed to the gate electrode of each FET is distributed to the connected gate regions of each field effect transistor. In response to such signal, the total drain-source resistance of such FET is changed between a predetermined low value and a predetermined high value, with the resistance of the predetermined high value being determined, in part, by the number of such isolated gate regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.