Patent · US Expired

Optical microlithography apparatus with a local alignment system

US4685807A · kind A · utility

11Cited by

3References

6Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Bernard Picard · St-Estève, FR

Key dates

Filing date	Feb 15, 1985
Grant date	Aug 11, 1987
Priority date	—
Expiry date	Feb 15, 2005

Classification

Technology area (CPC G)Physics
CPC primaryG03F9/70
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optical microlithography apparatus with a local alignment system is applicable to the production of integrated circuits. The local alignment system comprises a beam splitter between the photoreduction lens and the integrated circuit wafer, a sighting lens, an illumination source and an alignment pattern in the focal plane of the sighting lens. The source illuminates an area of the wafer around the position finding mark associated with each integrated circuit. The image of said mark is reflected into the focal plane of the sighting lens. A means then displaces the wafer in order to bring about coincidence between the image of the position finding mark and the alignment pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.