Etching method employing positive photoresist film
US4686173A · kind A · utility
3Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1985 |
| Grant date | Aug 11, 1987 |
| Priority date | — |
| Expiry date | Jul 23, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An etching method is disclosed including a process of improving the adhesiveness between a positive resist layer and a material layer to be etched. The material layer to be etched is dipped in an organic solvent. The structural body thus-produced in the aforesaid process is placed in the atmosphere of Freon vapor to dry the material layer to be etched. The positive resist film is then formed on the surface of the material layer to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.