Infrared imager
US4686373A · kind A · utility
41Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1986 |
| Grant date | Aug 11, 1987 |
| Priority date | — |
| Expiry date | Apr 15, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An infrared imager, wherein an array of detection devices is formed in a thin layer of HgCdTe, which is bonded to a silicon substrate containing a corresponding array of averaging capacitors with addressing and output connections, and via holes through (or bump bonding pads on) the HgCdTe are used to connect each detection device to its corresponding averaging capacitor. The signal from each detection device is repeatedly averaged into its averaging capacitor, so that the output of each pixel site is sensed as an average over a number of read cycles which provides a greatly improved signal-to-noise ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.