Patent · US Expired

Heterojunction semiconductor devices having a doping interface dipole

US4686550A · kind A · utility

50Cited by

7References

29Claims

0Family size

Assignee

American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

Federico Capasso · Westfield, US
Alfred Yi Cho · Summit, US

Key dates

Filing date	Dec 4, 1984
Grant date	Aug 11, 1987
Priority date	—
Expiry date	Dec 4, 2004

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3211
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Heterojunction devices having doping interface dipoles near the heterojunction interface are disclosed. The doping interface dipoles comprise two charge sheets of different conductivity type which are positioned within a carrier mean free path of the heterojunction interface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.