Semiconductor element and method for producing the same

US4686557A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Peter Mahrla · Zorneding, DE

Key dates

• Filing date: Dec 28, 1984
• Grant date: Aug 11, 1987
• Expiry date: Dec 28, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

Semiconductor element, including at least one bi-polar power transistor having parallel-connected transistor regions, active and contacted partial base zone regions, an emitter zone-base zone pn-junction, and base barrier resistances disposed between the active base regions at the emitter-base pn-junction and the contacted base regions, the greater part of the base current being conducted through the base barrier resistances and the voltage drop over the emitter region being small compared to the voltage between the active base region and the contacted base region.