Patent · US Expired

Three-dimensional CMOS using selective epitaxial growth

US4686758A · kind A · utility

57Cited by

4References

7Claims

0Family size

Assignee

Honeywell Limited · US

Inventors

Michael S. Liu · Bloomington, US
Bernd Hoefflinger · Sindelfingen, DE

Key dates

Filing date	Jan 2, 1986
Grant date	Aug 18, 1987
Priority date	—
Expiry date	Jan 2, 2006

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A three-dimensional CMOS integrated circuit structure in which two complementary field effect transistors are fabricated in vertical alignment with one another, and in which both transistors are single crystal and share a common crystal lattice structure and form a single unitary crystalline structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.